This invention makes use of arrays of quantum dots (QDs or nanoparticles) on one dimensional substrates (boron nitride nanotubes, BNNTs for example) as the “stepping stones” so that electrons can pass across them only when the applied potential across them is sufficient to cause quantum tunneling between the QDs. These QDs are separated with a gap / space in between. These QDs can be in any sizes (sub-nanometers to even micrometers) as long as the gap between them are small enough (sub nanometers to tens of nanometers) to allow electron tunneling and turn on the devices. These QDs can be in any materials including metals (Au, Fe, Ni, Mo, etc.), semiconductors (Si, Ge, CdSe, GaN, InAs, etc.), superconductors, and even insulators. The one dimensional substrates can be any nanotubes, nanowires, nanofibers, nanorods etc.. as long as they remain insulating within the potential range (range of bias voltages) of device operation. This will enable the absolute “off” state of the devices where no current will pass through the devices. Examples of such one dimensional substrates are BNNTs, nanowires of undoped Si, Ge, GaN, AlN, InAs, or any insulators, amorphous, or semiconductors. The one dimensional substrates can also be extended into two dimensional substrates. For examples, one can simply deposit arrays of QDs on the surfaces of any insulating substrates (for example, Si wafers with oxidized surfaces) between the device electrodes. The gaps between the QDs can remain in vacuum, air, or any gases. These gaps can also be filled with any liquids, solids, emulsions, colloidal suspensions etc.. This means such devices can be operational in space, liquids, or any ambient. Since the electronic properties will be modified when the gaps between the QDs are filled with gases, liquids, solids or even emulsions etc.. This means, these devices can be used as sensors for analytes in any forms including gases, liquids, solids, or particles of organic and inorganic substances. The use of ferromagnetic or magnetic QDs on these devices will lead to devices with electronic behaviors tunable by external magnetic fields. One can also convert this configuration into spintronic devices for example by using appropriate materials as the electrodes to align the spin of the source electrons and/or to maintain the alignment of the electron spins after they pass through the QDs. The QDs in these devices can be functionalized with chemical or biological molecules so that the devices can be used as chemical or biological sensors. For example, single strand deoxyribonucleic acids (ss-DNAs) can be functionalized on the QDs and be used to recognize the complimenting ss-DNAs, antigens or antibodies can be functionalized on the QDs to recognize the complimenting antibodies and antigens. The binding of these molecules on QDs will change to quantum states of the QDs and thus the potential required for electron tunneling. The proposed invention in fact leads to ambipolar conduction channels and thus can be used for logic devices when multiples of such channels are interconnected in appropriate configuration for the operation of basic logic gates (AND, OR, XOR, NOT, NAND, NOR, and XNOR.) and more complex switching devices. Plasmonic waves can be generated near the boundary of metal and insulator. Thus we expect to produce plasmonic wave on QDs-BNNTs. This will lead to light-modulated switching devices where the I-V characters can be modified by light. Such a plasmonic device may also be scaled to a more complex system with multiple QDs-BNNTs connected to each other in desired patterns. These QDs-BNNTs will then become a waveguide of plasmonic waves that deliver energy and electrons in a controllable way at the nanoscale.

File Number: 1148.00 

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Provisional Patent Application filed in November, 2011