Improved Electrical Properties of Boron-rich Films for Semiconductors Devices

NDSU Research Foundation
posted on 02/08/2012

• request more info 
•   
•  LICENSE ONLINE

Scientists working at North Dakota State University’s Center for Nanoscale Science and Engineering (CNSE) have developed novel processing conditions necessary for enhancing the charge collection and transport efficiency of p-type boron-rich semiconducting solids by an order-of-magnitude over the prior art. The advances made in the processing of the boron-carbide materials enable the enhancement of radiation-hardened semiconducting materials that can be used in applications where traditional semiconductors would fail.

•Neutron detection (for use in fissile materials, oil well logging, etc.) •Radiation-hardened applications (nuclear-voltaic batteries, neutron detection) •Thermoelectric devices

•Reduced recombination over prior art •The boron-rich materials created using this NDSU invention: •are resilient to corrosive and radioactive environments •can be used in high-temperature environments •offer a high electrical resistivity •offer a large neutron capture cross section •Advanced processes create a mechanically superior material not subject to delamination