Structures and Devices based on Boron Nitride

Texas Tech University System Office of Technology Commercialization
posted on 05/26/2011

Invention Title:

A novel method of producing hBN semiconducting deep ultraviolet (DUV) photonic materials.

Executive Summary:

The present invention relates to the production of hexagonal boron nitride (hBN) semiconducting materials and devices. This novel technology has two foreseen applications; 1) Deep ultraviolet light emitting devices and deep ultraviolet light sensing devices which will provide orders of magnitude higher efficiencies than current state-of-the art. Additionally, this mature technology (functional prototype) offers a longer product life and is compatible with AIGaN technology. 2) The production of solid-state neutron detectors for nuclear fissile materials sensing. These solid-state detectors do not need Helium-3 gas, are solid-state and compact (handheld devices and chip-scale devices), require low voltage to operate and are inexpensive to produce.

Technical Description

Because our technology utilizes hBN p-layer, as opposed to AIGaN p-layer, we can achieve 6-7 orders of higher magnitude than the AIGaN p-layer. Therefore, the quantum efficiency and lifetime of devices implementing hBN will be much better. The ability of conductivity control and wafer-scale production of hBN opens up tremendous opportunities for emerging applications, ranging from revolutionizing p-layer approach in III-nitride deep ultraviolet optoelectronics to graphene electronics.

Due to its unique layered structure and close in-plane lattice match to graphene, low dimensional hBN is expected to possess rich physical properties and could also be very useful as a template for graphene electronics. Due to its high bandgap and in-plane thermal conductivity, hBN has been considered both as an excellent electrical insulator and thermal conductor.

Inventor Background

Dr. Jingyu Lin & Dr. Hongxing Jiang are both Endowed Chairs and professors of Electrical and Computer Engineering at Texas Tech University. They received both their Masters and PhD from Syracuse University. Their research interests include Nanophotonics, III-nitride semiconductors (AlN, GaN, InN and their alloys), MOCVD growth, solid-state lighting, sensors, and energy-conversion devices. Both researches have been recognized as "who's who" in America and the World, published over 300 times and filed 20 patents. Both have served as panelist and proposal reviewers for NSF, DOE, DOD, NRC grants.

TTU Technology:

D-0812

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Innovation Details

File Number: D-0812

IP Protection

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This innovation currently is not available for online licensing. Please contact Ryan Reber at Texas Tech University System Office of Technology Commercialization for more information.

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