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Silicide-Induced Air Gaps
University of California System: University of California, Berkeley
posted on 11/19/2009
Investigators at the University of California, Berkeley have developed silicidation-induced air gaps, an innovative release etching method with many advantages over currently available methods. With this technique, optimal chip designs that were previously impractical due to limitation in current release methods, will now be obtainable. Additionally, for implantable medical device applications, the innovative silicidation-induced air gaps method will avoid current chemical contaminates of philological concern, especially when implanted permanently in the body.
Suggested Uses
- CMOS fabrication
– MEMS integration into CMOS processes
– Implantable medical devices
– Sub-50nm narrow gaps
– High Aspect Ratio Lateral Gaps
Advantages
- Fast and Cheaper Release
– Release Time Independent of Structure Aspect-Ratio
– Stiction-Free, Clean Release
– Robust Post-Package Release
– Localized Release
File Number: 19240
| Patent Number(s): | WO2011142850 |
|---|---|
| Copyright: | ©2009-2010, The Regents of the University of California |
This innovation currently is not available for online licensing. Please contact Kathleen McCowin at University of California System: University of California, Berkeley for more information.
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