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High Quality Aluminum Nitride Films
University of California System: University of California, Santa Barbara
posted on 06/18/2009
Improved growth technique that permits the fabrication of high-quality, low-defect density aluminum nitride semiconductor films that are relatively dislocation free.
Suggested Uses
- Optoelectronic devices
- High-power, high-frequency electronic devices
- AlN and AlGaN wafers
This technology is available for licensing on a non-exclusive basis.
Advantages
- Enables the production of readily available, inexpensive, high-quality substrate materials for nitride semiconductors.
- Improved optoelectronic and electronic device performances
Detailed Description
Researchers at the University of California, Santa Barbara have solved this problem by developing a lateral epitaxial growth technique that permits the fabrication of high-quality, low-defect density aluminum nitride semiconductor films that are relatively dislocation free.
File Number: 19167
Other Information:
Background
The growth of aluminum nitrides has been pursued by a variety of techniques, but the unavailability of bulk crystals or lattice-matched substrates has resulted in heteroepitaxial films of poor quality possessing relatively high structural defect densities.
| Copyright: | ©2009-2010, The Regents of the University of California |
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This innovation currently is not available for online licensing. Please contact Franco Caporale at University of California System: University of California, Santa Barbara for more information.
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