Improved Manufacturing of Semiconductor Lasers
University of California System: University of California, Santa Barbara
posted on 06/11/2009
A method of fabricating a semiconductor laser incorporating buried grating mirrors and photonic crystals, and more particularly, novel structures grown on substrates patterned by these gratings and photonic crystals.
Suggested Uses
- fiber optic networks
- instrumentation lasers
- optical spectroscopy
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Advantages
- Improved operation of the laser
- Improved contact structures and reduced waveguiding loss by contact electrodes
- Planar fabrication process makes this invention easily manufacturable at low cost.
Detailed Description
Researchers at UCSB have developed a method of fabricating a semiconductor laser incorporating buried grating mirrors and photonic crystals, and more particularly, novel structures grown on substrates patterned by these gratings and photonic crystals. Each patterned layer may be engineered to act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element, etc. for the active layers. These novel laser structures rely on active layers directly grown on patterned substrates with multiple lateral epitaxial overgrowth (LEO) layers to improve contact structures and reduce waveguiding loss by contact electrodes.
File Number: 18968
Other Information:
Background
Nitride lasers are extremely difficult to manufacture, so there is a need for improved methods of fabricating horizontal emitting, vertical emitting, beam shaped and distributed feedback lasers by growth over a patterned substrate with multiple overgrowth.
| Patent Number(s): | 7768024 |
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| Copyright: | ©2009-2011, The Regents of the University of California |
This innovation currently is not available for online licensing. Please contact Franco Caporale at University of California System: University of California, Santa Barbara for more information.
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