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Method of Making Nitrogen-Polar Devices Using Conventional Gallium Face Growth Techniques
University of California System: University of California, Santa Barbara
posted on 08/06/2009
New method to fabricate III-nitride semiconductor devices on the nitrogen-face of layers using wafer bonding and substrate removal.
Suggested Uses
- High Frequency Communication
- High Voltage Switching Applications
- LEDs
- Solar Cells
The technology is available for licensing.
Advantages
- Increased device performances
- Reductions in the sizes of passive components
- Potential for integration with conventional CMOS
Detailed Description
Researchers at the University of California, Santa Barbara have developed a new method to fabricate III-nitride semiconductor devices on the nitrogen-face of layers using wafer bonding and substrate removal.
File Number: 19389
Other Information:
Background
There are several methods of obtaining nitrogen-polar devices. The most direct method is to use a substrate that naturally provides for the N-polarity or by using surface treatments on substrates such as sapphire to generate the buffer that lead to N-polar devices.
| Copyright: | ©2009-2010, The Regents of the University of California |
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This innovation currently is not available for online licensing. Please contact Franco Caporale at University of California System: University of California, Santa Barbara for more information.
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