Researchers at the University of California, Santa Barbara have developed a novel way to reduce device resistances by utilizing a two dimensional electron gas (TDEG) structure. Conservative simulations show a reduction in n-layer resistance of 150-200% using a TDEG, resulting in an improvement in wall plug efficiency from 5-9%. Reducing the n-contact layer resistance also decreases the amount of parasitic heating, which allows laser operation at higher ambient temperatures and higher output powers under elevated bias current conditions.

File Number: 18964 

Web site: http://techtransfer.universityofcalifornia.edu/...

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Background
The wall plug efficiency (electrical power converted to optical power) of the hybrid silicon laser is primarily limited by device resistance and carrier injection efficiency. A major problem with advanced electron gas silicon laser designs is that they utilize a bulk n-type InP contact layer with high resistance. This reduces the laser wall plug efficiency and causes significant parasitic heating of the active laser region.