HIGHLY PLASMA ETCH-RESISTANT PHOTORESIST COMPOSITION CONTAINING A PHOTOSENSITIVE POLYMERIC TITANIA PRECURSOR
University of Missouri System: Missouri University of Science and Technology
posted on 07/02/2009
HIGHLY PLASMA ETCH-RESISTANT PHOTORESIST COMPOSITION CONTAINING A PHOTOSENSITIVE POLYMERIC TITANIA PRECURSOR
Detailed Description
Abstract of US Patent 6,303,270 – Highly plasma etch-resistant photoresist composition containing a photosensitive polymeric titania precursor: A composition is derived from an addition polymerizable organotitanium polymer which upon exposure to an oxygen plasma or baking in air, is converted to titanium dioxide (titania) or is converted to a mixed, titanium-containing metal oxide. The metal oxide formed in situ imparts etch-resistant action to a patterned photoresist layer. The composition may also be directly deposited and patterned into permanent metal oxide device features by a photolithographic process.Non-Confidential Abstract of Invention: This invention relates to light-sensitive compositions useful for defining patterns on substrates by photolithography. The new photoresist composition is especially useful in microlithographic applications where it is desirable to form microscopically-sized patterns which exhibit exceptional resistance to plasma etching. The composition is derived from a photosensitive organotitanium polymer which upon exposure to an oxygen plasma or baking in air is converted to titanium dioxide (titania) or a mixed, titanium-containing metal oxide. The in situ-formed metal oxide imparts the etch-resistant action to the patterned photoresist layer. The new photoresist may also be used to directly deposit permanent metal oxide device features by a photolithographic process.
File Number: 98UMR044
Web site: http://ecodevo.mst.edu
Other Information:
Case Manager: Keith D. Strassner, kdstrass@mst.edu
| Patent Number(s): | 6303270 |
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